tda5360uk NXP Semiconductors, tda5360uk Datasheet - Page 27
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
tda5360uk
Manufacturer Part Number
tda5360uk
Description
Pre-amplifier For Hard Disk Drive With Mr-read / Inductive Write Heads
Manufacturer
NXP Semiconductors
Datasheet
1.TDA5360UK.pdf
(34 pages)
Philips Semiconductors
12.2
Unless otherwise specified, recommended operating conditions apply.
1998 July 30
SYMBOL
I
Pwr
V
A Vd
f HR
IRNV
NF
V
V
MR
f LR
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
Rext
CCTL
EETL
Read Characteristics
PARAMETER
MR Current Range
MR Power Range
MR Power Tolerance
MR Bias Current Overshoot
RMR Digitizer Accuracy
Rext Reference Voltage
Differential Voltage Gain
Passband Upper -3dB
Frequency
Passband Lower -3dB
Frequency
Input referenced noise voltage
(including MR bias current noise,
excluding Rmr noise)
MR bias current noise
Noise figure
HF noise +3dB frequency
LF noise +3dB frequency
Voltage compliance for WDP
and WDN in current mode
V
V
CC
EE
Fault Threshold
Fault Threshold
CMM of the inputs
in current mode
Hysteresis=100mV +/- 10%
Hysteresis=100mV +/- 10%
CONDITIONS
SAL
GMR
SAL
GMR
(Note 3)
3 < I
V IN = 1mV PP @ 20MHz,
R
R MR = 66 Ohm,
RIN = 18 Ohm,
GAIN0=0, GAIN1=1,GMR=0
R MR = 66 ;L MR =30nH
- 3dB. Without boost.
R MR = 66 ; L MR = 30nH;
LPF0=0
LPF1=1
R
10 MHz<f<100 MHz, GMR=0
(Note 4)
I
I MR =5mA 10 MHz<f<130MHz
(Note 5)
Preamp noise=head noise
Preamp noise=head noise
MR
Load
MR
=8mA 10 MHz<f<100MHz
MR
27
= 66 ; I
dif =
< 10mA
MR
Ohm,I
=8mA
MR
=8mA,
1.5
3.80
-4.20
Objective Specification, Revision 2.2
MIN
4
3
1.500
0.375
-5
48
225
4.00
-4.00
TYP
8
4.2
1
0
5
1.31
0.8
8
5.7
1.7
350
3
50
Vcc -1.7
4.20
-3.80
TDA5360
MAX
10.2
6
9.25
2.30
+5
52
3
V
V
V
UNIT
mA
mW
mW
%
%
%
V
dB
MHz
MHz
nV/
÷sqrt
Hz
pA/
sqrt÷
Hz
dB
MHz
MHz