tda5360uk NXP Semiconductors, tda5360uk Datasheet - Page 4
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tda5360uk
Manufacturer Part Number
tda5360uk
Description
Pre-amplifier For Hard Disk Drive With Mr-read / Inductive Write Heads
Manufacturer
NXP Semiconductors
Datasheet
1.TDA5360UK.pdf
(34 pages)
- Current page: 4 of 34
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Philips Semiconductors
3
1998 July 30
V
V
NF
IRNV
Avd
f
CMR
PSR
t
I
I
f
HR
r
MR(PR)
WR(b-p)
sclk
SYMBOL
, t
CC
EE
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
f
QUICK REFERENCE DATA
DC Supply voltage
Noise Figure
Input Referred Noise
Voltage
Differential gain
-3dB frequency bandwidth
Common Mode Rejection
Power Supply Rejection
Write Current Rise/Fall times
Programming MR bias
current range
Programming Write current
range (base-to-peak)
Serial interface clock rate
(-0.8 * Iwr => +0.8 * Iwr)
PARAMETER
Note 3, Section 14
Rmr=66 ; Imr=8mA;
10 MHz<f<100 MHz
V
R
Rmr=66 ,
GAIN0=0, GAIN1=1;
Rmr=66 , Lmr=30 nH
-3dB: without Boost
Imr=8 mA, Rmr=66 ,
10MHz<f<200MHz
1 MHz<f< 10 MHz
f<100 kHz, 1mV input signal
200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66 ,
10MHz<f<200MHz
1 MHz<f<10 MHz
f < 100 kHz
Iwr=50 mA; f=20 MHz;
L
SAL
GMR (see note section 10)
Rext
H
IN
Loaddif
=75nH, R
=1mVpp @ 20 MHz,
10 k
=
CONDITIONS
H
4
=10
, Imr=8mA,
GMR
SAL
+4.5
-4.5
225
225
4
3
10
MIN.
Objective Specification, Revision 2.2
+5
-5
1.7
0.8
50
20
40
60
20
40
60
TYP.
+5.5
-5.5
1.7
0.84
10.2
6 .1
50.3
40
MAX.
TDA5360
V
V
dB
nV/
sqrtHz
dB
MHz
MHz
dB
dB
dB
dB
dB
dB
ns
mA
mA
mA
MHz
UNIT
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