m36w0r5020b0 STMicroelectronics, m36w0r5020b0 Datasheet - Page 13

• Manufacturer Part Number: m36w0r5020b0
• Description: 32 Mbit 2mb X16, Multiple Bank, Burst Flash Memory And 4 Mbit Sram, 1.8v Supply Multi-chip Package
• Manufacturer: STMicroelectronics

DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 4. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
V
V
V
V
V
Ambient Operating Temperature
Load Capacitance (C
Output Circuit Resistors (R
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
DDS
DDQ
PPF
PPF
V DDQ
Symbol
C
Supply Voltage
0V
Supply Voltage
Supply Voltage
Supply Voltage (Factory environment)
Supply Voltage (Application environment)
C
OUT
IN
Input Capacitance
Output Capacitance
Parameter
L
)
Parameter
1
, R
2
)
V DDQ /2
AI06161
Test Condition
11.4
–0.4
V
Min
–40
1.7
1.7
V
–
OUT
Flash Memory
IN
0 to V
= 0V
V
= 0V
Conditions summarized in
AC Measurement
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Figure 7. AC Measurement Load Circuit
16.7
DDQ
0.1µF
30
DDQ
V
/2
V
DDF
DDQ
Max
1.95
1.95
12.6
85
–
5
0.1µF
+0.4
M36W0R5020T0, M36W0R5020B0
V
DDQ
C
L
Min
includes JIG capacitance
Conditions. Designers should
DEVICE
Min
UNDER
–40
1.7
TEST
–
–
–
–
0 to V
V
SRAM
16.7
DDS
Table 4., Operating and
30
Max
DDS
/2
12
15
V
DDQ
Max
1.95
85
–
–
–
–
1
C
R
L
1
Unit
pF
pF
AI08364B
R
Unit
2
pF
k
°C
ns
V
V
V
V
V
V
V
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