lm5102sdx National Semiconductor Corporation, lm5102sdx Datasheet - Page 10

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lm5102sdx

Manufacturer Part Number
lm5102sdx
Description
High Voltage Half-bridge Gate Driver With Programmable Delay
Manufacturer
National Semiconductor Corporation
Datasheet

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Operational Notes
Diode Power Dissipation V
Diode Power Dissipation V
(Continued)
IN
IN
= 80V
= 40V
20088906
20088907
10
The total IC power dissipation can be estimated from the
above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel with the internal bootstrap diode (refer to Figure 4)
and can be helpful in removing power from the IC. For this to
be effective, the external diode must be placed close to the
IC to minimize series inductance and have a significantly
lower forward voltage drop than the internal diode.

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