lm5102sdx National Semiconductor Corporation, lm5102sdx Datasheet - Page 3

• Manufacturer Part Number: lm5102sdx
• Description: High Voltage Half-bridge Gate Driver With Programmable Delay
• Manufacturer: National Semiconductor Corporation

SUPPLY CURRENTS
I
I
I
I
I
I
INPUT PINS
V
V
R
TIME DELAY CONTROLS
V
I
V
T
T
UNDER VOLTAGE PROTECTION
V
V
V
V
BOOT STRAP DIODE
V
V
R
LO GATE DRIVER
V
V
I
I
HO GATE DRIVER
V
DD
DDO
HB
HBO
HBS
HBSO
RT
OHL
OLL
DL1
DL2
IL
IH
I
RT
th
DDR
DDH
HBR
HBH
DL
DH
D
OLL
OHL
OLH
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
type apply over the full operating junction temperature range. Unless otherwise specified, V
0V, RT1 = RT2 = 100kΩ. No Load on LO or HO.
Symbol
, T
, T
V
V
LI or HI Inputs to V
LO Output
HO Output
V
V
RT1 & RT2 to V
Junction Temperature
DD
HB
HS
HB
DH1
DH2
to V
to V
to V
to V
HS
SS
SS
SS
V
V
Total HB Quiescent Current
Total HB Operating Current
HB to V
HB to V
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance
Nominal Voltage at RT1, RT2
RT Pin Current Limit
Timer Termination Threshold
Rising edge turn-on delay, RT = 10 kΩ
Rising edge turn-on delay, RT = 100 kΩ
V
V
HB Rising Threshold
HB Threshold Hysteresis
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
Low-Level Output Voltage
High-Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
Low-Level Output Voltage
DD
DD
DD
DD
Quiescent Current
Operating Current
Rising Threshold
Threshold Hysteresis
SS
SS
SS
SS
Current, Quiescent
Current, Operating
Parameter
V
HS
– 0.3V to V
–0.3V to V
–0.3V to V
–0.3V to +18V
–0.3V to +18V
−1V to +100V
–0.3V to 5V
Specifications in standard typeface are for T
DD
DD
HB
(Note 1)
+150˚C
+ 0.3V
+ 0.3V
+ 0.3V
118V
LI = HI = 0V
f = 500 kHz
LI = HI = 0V
f = 500 kHz
V
f = 500 kHz
RT1 = RT2 = 0V
I
I
I
I
I
V
V
V
I
VDD-HB
VDD-HB
VDD-HB
LO
LO
HO
HS
OHL
LO
LO
= 100 mA
= –100 mA,
= 100 mA
= V
= 0V
= 12V
3
= V
Conditions
HB
= 100 µA
= 100 mA
= 100 mA
DD
Recommended Operating
Conditions
= 100V
Storage Temperature Range
ESD Rating HBM
(Note 2)
– V
V
HS
HB
HS Slew Rate
Junction Temperature
DD
LO
0.75
J
Min
100
530
0.8
2.7
6.0
5.7
75
= +25˚C, and those in boldface
DD
= V
V
0.06
0.05
0.08
0.60
0.85
0.25
0.35
0.25
Typ
200
105
630
0.4
1.5
1.3
1.8
1.8
1.5
1.8
6.9
0.5
6.6
0.4
0.8
1.6
1.8
HS
3
HB
+ 8V to V
= 12V, V
–40˚C to +125˚C
–55˚C to +150˚C
+9V to +14V
–1V to 100V
Max
2.25
0.55
500
150
750
0.6
0.2
2.2
3.3
7.4
7.1
0.9
1.1
1.5
0.4
0.4
10
3
3
HS
SS
<
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50V/ns
+ 14V
= V
2 kV
HS
Units
mA
mA
mA
mA
mA
mA
µA
kΩ
ns
ns
Ω
V
V
V
V
V
V
V
V
V
V
V
V
A
A
V
=