r2j20656anp Renesas Electronics Corporation., r2j20656anp Datasheet - Page 13
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r2j20656anp
Manufacturer Part Number
r2j20656anp
Description
Integrated Driver - Mos Fet Drmos
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.R2J20656ANP.pdf
(16 pages)
R2J20656ANP
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal
operation; after the PWM input signal has stayed in the hysteresis window for 150 ns (typ.) and the tri-state detection
signal has been driven high, the transistor M1 is turned off.
When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is
asserted high signal, M1 becomes ON and shifts to normal operation.
THWN & THDN
This device has two level thermal detection, one is thermal warning and the other is thermal shutdown function.
This Thermal Warning feature is the indication of the high temperature status.
THWN is an open drain logic output signal and need to connect a pull-up resistor (ex.51 k) to THWN for Systems
with the thermal warning implementation.
When the chip temperature of the internal driver IC becomes over 115°C, Thermal warning function operates.
This signal is only indication for the system controller and does not disable DrMOS operation.
When thermal warning function is not used, keep this pin open.
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
PWM Pin
Figure 3 Equivalent Circuit for the PWM-pin Input
THWN output
Logic Level
Figure 4 THWN Trigger Temperature
M1
"H"
"L"
14.5 k
12.5 k
Normal
operating
VCIN
Logic
Input
100
115
Thermal
warning
T
IC
Tri-state
detection signal
To internal control
(°C)
Page 13 of 15
Preliminary