r2j20656anp Renesas Electronics Corporation., r2j20656anp Datasheet - Page 14

• Manufacturer Part Number: r2j20656anp
• Description: Integrated Driver - Mos Fet Drmos
• Manufacturer: Renesas Electronics Corporation.

R2J20656ANP
THDN is an internal thermal shutdown signal when driver IC becomes over 150°C.
This function makes High Side MOS FET and Low Side MOS FET turn off for the device protection from abnormal
high temperature situation and at the same time DISBL# pin is pulled low internally to give notice to the system
controller. Once thermal shutdown function operates, driver IC keeps DISBL# pin pulled low until VCIN becomes
under UVL level (3.8 V).
Figure 5 shows the example of two types of DISBL# connection with the system controller signal.
< 150°C
> 150°C
MOS FET
The MOS FETs incorporated in R2J20656ANP are highly suitable for synchronous-rectification buck conversion. For
the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the
low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
To shutdown signal
Figure 5.1 THDN Signal to the System Controller
Driver IC Temp.
10 k
5 V
DISBL#
Enable (GL, GH = "Active")
Shutdown (GL, GH = "L")
Driver Chip Status
2 μA
Shutdown
To Internal
Logic
Detection
Thermal
Figure 5.2 ON/OFF Signal from the System Controller
ON/OFF signal
10 k
DISBL#
2 μA
Page 14 of 15
Preliminary
Shutdown
To Internal
Logic
Detection
Thermal