mc9s08ac32 Freescale Semiconductor, Inc, mc9s08ac32 Datasheet - Page 54

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mc9s08ac32

Manufacturer Part Number
mc9s08ac32
Description
Hcs08 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Chapter 4 Memory
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
54
2. The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
YES
Figure 4-3. FLASH Burst Program Flowchart
TO BUFFER ADDRESS AND DATA
0
WRITE COMMAND TO FCMD
NEW BURST COMMAND ?
MC9S08AC60 Series Data Sheet, Rev. 2
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE 1 TO FCBEF
WRITE TO FCDIV
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
FCBEF ?
FCCF ?
START
DONE
1
NO
NO
1
1
(1)
(2)
0
YES
0
(2)
checking FCBEF or FCCF.
(1)
Wait at least four bus cycles before
after reset.
Only required once
ERROR EXIT
Freescale Semiconductor

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