2sc6000 TOSHIBA Semiconductor CORPORATION, 2sc6000 Datasheet - Page 2

• Manufacturer Part Number: 2sc6000
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Switching time
IB1
Duty cycle ＜ 1%
Characteristics
20μs
C6000
Rise time
Storage time
Fall time
IB2
Input
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
IB2
IB1
V
V
V
Symbol
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
t
stg
t
t
r
f
VCC
V
V
I
V
V
I
I
See Figure 1 circuit diagram
V
I
C
C
C
B1
CB
EB
CE
CE
CC
Output
= 10 mA, I
= 2.5 A, I
= 2.5 A, I
= 83 mA, I
= 120 V, I
= 6 V, I
= 2 V, I
= 2 V, I
∼ − 20 V, R
2
B
B
C
C
C
Test Condition
B
= 83 mA
= 83 mA
B2
= 0
= 1 mA
= 2.5 A
L
E
= 0
= 8.0 Ω
= 0
= −166 mA
160
250
Min
50
―
―
―
―
―
―
―
Typ.
450
―
―
―
―
―
―
―
45
13
2006-11-13
2SC6000
Max
0.18
1.10
100
100
400
―
―
―
―
―
Unit
nA
nA
ns
V
V
V