2sc6000 TOSHIBA Semiconductor CORPORATION, 2sc6000 Datasheet - Page 3

• Manufacturer Part Number: 2sc6000
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
0.1
1.5
1.0
0.5
2.0
0.001
1
0
4
2
0
8
6
0
0
Common emitter
I C /I B = 30
Common emitter
V CE = 2 V
50
0.2
Collector-emitter voltage V
Base-emitter voltage V
1
Tc = 100°C
30
0.01
Collector current I
25
0.4
V
CE (sat)
2
Tc = 100°C
I
I
C
C
– V
– V
0.6
0.1
25
CE
BE
– I
20
3
−55
C
C
0.8
BE
Common emitter
Tc = 25℃
(A)
CE
−55
1
(V)
4
(V)
I B = 2 mA
1.0
10
0
5
1.2
10
5
3
10000
1000
100
10
0.001
0.1
10
0.001
1
Common emitter
V CE = 2 V
Common emitter
I C /I B = 30
0.01
0.01
Collector current I
Tc = 100°C
Collector current I
25
Tc = −55°C
−55
25
V
BE (sat)
h
FE
0.1
0.1
– I
C
100
– I
C
C
C
(A)
(A)
1
1
2006-11-13
2SC6000
10
10