2sc6000 TOSHIBA Semiconductor CORPORATION, 2sc6000 Datasheet - Page 4

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2sc6000

Manufacturer Part Number
2sc6000
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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0.01
100
0.1
10
1
0.1
I C max (Pulse)*
I C max (Continuous)*
*: Single non-repetitive pulse
Tc = 25°C
Curves
linearly
temperature.
Collector-emitter voltage V
must
with
DC operation
Tc = 25°C
0.1
1
10
0.001
1
Safe Operating Area
increase
be
derated
in
10
0.01
10 μs*
CE
100
100 μs*
1 ms*
10 ms*
100 ms*
V CEO max
(V)
0.1
Pulse width t w (s)
1000
r
th(j-c)
4
– t
w
1
Curves should be applied in thermal
limited area. (Single non-repetitive
pulse)
Tc = 25℃ (infinite heat sink)
10
100
2006-11-13
2SC6000

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