hn7g07fu TOSHIBA Semiconductor CORPORATION, hn7g07fu Datasheet
hn7g07fu
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hn7g07fu Summary of contents
Page 1
... V CEO EBO I 100 mA C Symbol Rating Unit P * 200 150 °C j −55~150 T °C stg 1 HN7G07FU Unit EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 0.0068 g (typ.) Marking Type Name hFE Rank Equivalent Circuit ...
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... 0 I(OFF MHz ⎯ R1 ⎯ R1/R2 2 HN7G07FU Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 100 nA ⎯ 300 1000 ⎯ ⎯ 110 250 ⎯ 0.87 1.2 V ⎯ ⎯ ...
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... 25° 0.5 0.3 0.1 300 1000 0.1 0.3 100 = 1.6 0.1 0.3 (V) Collector-base voltage V 3 HN7G07FU h – Common emitter 100°C 25 − 100 300 1000 Collector current I (mA – (sat ...
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... Q2 EMITTER COMMON VCE=0.2V INPUT VOLTAGE VI(ON) (V) EMITTER COMMON VCE=5V COLLECTOR CURRENT IC (mA) EMITTER COMMON VCE=5V INPUT VOLTAGE VI(OFF) (V) EMITTER COMMON IC/IB =20 COLLECTOR CURRENT IC (mA) 4 HN7G07FU 2005-03-23 ...
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... Q1, Q2 common * P – 400 300 200 100 100 AMBIENT TEMPERATURE Ta ( ° C) *:Total rating 125 150 175 5 HN7G07FU 2005-03-23 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 HN7G07FU 030619EAA 2005-03-23 ...