hn7g07fu TOSHIBA Semiconductor CORPORATION, hn7g07fu Datasheet - Page 3
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hn7g07fu
Manufacturer Part Number
hn7g07fu
Description
Toshiba Multichip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN7G07FU.pdf
(6 pages)
Q1
1000
1000
500
300
100
500
300
100
1.0
0.8
0.6
0.4
0.2
50
30
10
50
30
10
5
3
1
0
0.1
5
3
1
0.0
0
Common emitter
I C /I B = 20
0.3
Ta = 100°C
Collector-emitter voltage V
6
Base-emitter voltage V
1
0.4
Collector current I
1
Ta = 100°C
5
4
V
3
25
CE (sat)
2
I
I
C
C
– V
– V
0.8
10
−25
3
CE
BE
– I
3
30
C
C
−25
25
Common emitter
Ta = 25°C
BE
Common emitter
V
(mA)
CE
CE
100
1.2
2
IB = 0.5 mA
= 2 V
(V)
4
(V)
300
1
1000
1.6
5
3
10000
5000
3000
1000
500
300
100
100
0.5
0.3
0.1
50
30
10
50
30
10
50
30
10
5
3
1
5
3
1
0.1
0.1
0.1
Common emitter
I C /I B = 20
Ta = 25°C
0.3
0.3
0.3
Collector-base voltage V
Collector current I
Collector current I
1
1
Ta = 100°C
1
−25
3
V
25
C
3
BE (sat)
h
ob
FE
10
– V
3
– I
10
CB
– I
C
30
C
C
C
10
30
(mA)
(mA)
CB
Common emitter
V CE = 2 V
100
I E = 0 A
f = 1 MHz
Ta = 25°C
100
(V)
30
HN7G07FU
300
2005-03-23
300
1000
500
100