hn7g07fu TOSHIBA Semiconductor CORPORATION, hn7g07fu Datasheet - Page 2

• Manufacturer Part Number: hn7g07fu
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Q2 Electrical Characteristics
**: h
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
FE
Classification
Characteristic
Characteristic
Turn-on time
Storage time
Fall time
A:300~600, B:500~1000
(Ta = 25°C)
(Ta = 25°C)
V
V
CE (sat) (1)
CE (sat) (2)
V
V
Symbol
Symbol
V
h
V
R1/R2
BE (sat)
CE (sat)
I
I
I
I
I
I(OFF)
CBO
FE
C
CBO
CEO
h
C
EBO
t
EBO
I(ON)
R1
t
f
stg
f
on
t
FE
T
ob
T
ob
f
**
V
V
V
I
I
I
V
V
V
V
V
V
I
V
V
V
V
0 V
Duty cycle < = 2%
IB1 = IB2 = 5 mA
C
C
C
C
CB
EB
CE
CE
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 10 mA, I
= 200 mA, I
= 200 mA, I
= 5 mA, I
10 µs
2
= 15 V, I
= 5 V, I
= 2 V, I
= 2 V, I
= 10 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
INPUT
Test Condition
Test Condition
B
C
C
C
C
C
C
B
C
E
E
E
E
E
= 0.25 mA
C
= 0
= 10 mA
= 10 mA
= 0
= 10 mA
= 0.1 mA
B
B
= 0.5 mA
= 0
= 0, f = 1 MHz
= 0
= 0
= 5 mA
= 0, f = 1 MHz
= 5 mA
= 10 mA
= 10 mA
⎯
⎯
300 Ω
V
BB
OUTPUT
V
= 3 V
CC
= 6 V
0.37
1.54
Min
300
Min
0.7
0.3
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.87
Typ.
0.22
110
130
170
250
4.2
0.1
2.2
⎯
⎯
⎯
15
85
40
⎯
⎯
⎯
⎯
⎯
⎯
3
HN7G07FU
2005-03-23
1000
Max
Max
0.71
2.86
100
100
250
100
500
1.2
0.3
2.5
1.0
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
mV
mA
kΩ
nA
nA
pF
nA
nA
pF
ns
ns
ns
V
V
V
V