bsc160n10ns3g Infineon Technologies Corporation, bsc160n10ns3g Datasheet - Page 2

• Manufacturer Part Number: bsc160n10ns3g
• Description: Optimos Power Transistor Power Mosfet Power Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.3
1)
2)
connection. PCB is vertical in still air.
3)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
see figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=33 A
DS
=V
=100 V, V
=100 V, V
=0 V, I
=20 V, V
=10 V, I
=6 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
=16 A
D
=33 µA
DS
DS(on)max
=33 A
GS
GS
=0 V
=0 V,
=0 V,
2)
,
min.
100
21
2
-
-
-
-
-
-
-
-
Values
0.01
13.9
17.6
typ.
2.7
1.4
10
42
1
-
-
-
BSC160N10NS3 G
max.
100
100
2.1
3.5
50
16
33
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2009-10-30