bsc160n10ns3g Infineon Technologies Corporation, bsc160n10ns3g Datasheet - Page 7

• Manufacturer Part Number: bsc160n10ns3g
• Description: Optimos Power Transistor Power Mosfet Power Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
110
105
100
10
95
90
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
125 °C
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=16 A pulsed
g s
5
Q
Q
20 V
gate
g
Q
10
sw
[nC]
Q
BSC160N10NS3 G
g d
50 V
15
80 V
Q
g ate
2009-10-30
20