bsc160n10ns3g Infineon Technologies Corporation, bsc160n10ns3g Datasheet - Page 6
bsc160n10ns3g
Manufacturer Part Number
bsc160n10ns3g
Description
Optimos Power Transistor Power Mosfet Power Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC160N10NS3G.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSC160N10NS3G
Manufacturer:
IR
Quantity:
5 460
Part Number:
bsc160n10ns3gATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
35
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=33 A; V
20
20
98 %
GS
V
=10 V
T
j
DS
60
40
[°C]
typ
[V]
Coss
Ciss
Crss
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.5
2.5
1.5
0.5
10
=f(T
SD
4
3
2
1
0
1
-60
)
0
j
); V
D
j
GS
-20
=V
150 °C
0.5
DS
20
33 µA
V
T
25 °C, 98%
SD
j
60
[°C]
1
25 °C
330 µA
[V]
BSC160N10NS3 G
100
150 °C, 98%
1.5
140
2009-10-30
180
2