bsc160n10ns3g Infineon Technologies Corporation, bsc160n10ns3g Datasheet - Page 5

• Manufacturer Part Number: bsc160n10ns3g
• Description: Optimos Power Transistor Power Mosfet Power Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
120
100
80
60
40
20
80
60
40
20
0
DS
GS
0
0
); T
0
); |V
j
=25 °C
j
GS
DS
1
|>2|I
2
D
|R
1
150 °C
DS(on)max
3
V
V
GS
DS
4.5 V
10 V
[V]
[V]
7 V
5 V
4
5.5 V
25 °C
2
5
6 V
6
page 5
3
7
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
80
60
40
20
30
25
20
15
10
0
D
=f(I
5
0
); T
0
0
D
4.5 V
j
); T
=25 °C
GS
j
=25 °C
20
20
5 V
40
5.5 V
40
I
I
D
D
[A]
[A]
BSC160N10NS3 G
60
60
6 V
7 V
80
80
10 V
2009-10-30
100
100