fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet - Page 3

• Manufacturer Part Number: fds6900asnl
• Description: Microsoft Word - Fds6900as.doc
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label.
Q
Q
Q
Q
Switching Characteristics
I
T
Q
T
Q
V
the drain pins. R
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
S
θJA
rr
rr
SD
g
g
gs
gd
rr
rr
(TOT)
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
θJC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
(Note 2)
θCA
is determined by the user's board design.
(continued)
I
d
I
d
V
V
V
Q2:
V
Q1:
V
F
F
iF
iF
GS
GS
GS
DS
DS
= 8.2 A,
= 6.9 A,
/d
/d
= 15 V, I
= 15 V, I
= 0 V, I
= 0 V, I
= 0 V, I
t
t
= 300 A/µs
= 100 A/µs
Test Conditions
S
S
S
D
D
= 2.3 A
= 5 A
= 1.3 A
= 8.2A
= 6.9A
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
2
pad of
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
c)
5.8
6.1
1.6
1.7
2.1
2.2
0.6
0.7
0.7
10
11
15
19
10
6
135°C/W when
mounted on a
minimum pad.
8.2
8.5
2.3
1.3
0.7
1.0
1.2
15
15
FDS6900AS Rev B (X)
nC
nC
nC
nC
nC
nC
ns
ns
A
V