fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet - Page 8

• Manufacturer Part Number: fds6900asnl
• Description: Microsoft Word - Fds6900as.doc
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6900AS.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690).
Figure 24. Non-SyncFET (FDS6690) body
Figure 23. FDS6900AS SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
Time: 10nS/DIV
Time: 10nS/DIV
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
0.000001
0.00001
0.0001
0.001
0.01
0
5
V
DS
, REVERSE VOLTAGE (V)
10
125
100
25
15
o
o
o
C
C
C
20
FDS6900AS Rev B (X)
25
30