fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet - Page 7
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fds6900asnl
Manufacturer Part Number
fds6900asnl
Description
Microsoft Word - Fds6900as.doc
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS6900ASNL.pdf
(10 pages)
Typical Characteristics Q1
10
0.01
Figure 20. Maximum Safe Operating Area.
100
8
6
4
2
0
0.1
10
Figure 18. Gate Charge Characteristics.
0.001
1
0
0.1
0.01
0.1
I
D
0.0001
1
R
= 6.9A
SINGLE PULSE
R
DS(ON)
θ JA
V
T
GS
A
= 135
= 25
2
LIMIT
= 10V
D = 0.5
o
o
0.2
C
C/W
0.1
0.05
V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
4
SINGLE PULSE
1
V
g
0.001
, GATE CHARGE (nC)
DS
DC
= 10V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
1s
Figure 22. Transient Thermal Response Curve.
100ms
15V
10ms
10
8
0.01
1ms
20V
10
100 µ s
100
0.1
12
t
1
, TIME (sec)
800
600
400
200
50
40
30
20
10
0
0
0.001
Figure 19. Capacitance Characteristics.
0
C
1
rss
Figure 21. Single Pulse Maximum
0.01
5
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
oss
0.1
10
10
t
1
, TIME (sec)
1
15
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
100
A
t
= 135
10
1
= P * R
20
t
2
C
SINGLE PULSE
R
iss
o
θ JA
C/W
T
θJA
A
FDS6900AS Rev B (X)
= 135°C/W
θJA
1
= 25°C
100
(t)
/ t
25
2
f = 1 MHz
V
GS
= 0 V
1000
1000
30