fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet - Page 4

• Manufacturer Part Number: fds6900asnl
• Description: Microsoft Word - Fds6900as.doc
• Manufacturer: Fairchild Semiconductor

Typical Characteristics: Q2
30
20
10
0
30
25
20
15
10
1.6
1.4
1.2
0.8
0.6
5
0
0
Figure 3. On-Resistance Variation with
1
1.5
-50
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
V
6.0V
V
GS
DS
V
I
D
= 10V
GS
= 5V
0.5
= 8.2A
-25
= 10V
2
V
V
DS
T
GS
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
T
, GATE TO SOURCE VOLTAGE (V)
4.5V
Temperature.
A
1
= 125
4.0V
25
2.5
o
C
1.5
50
25
3.5V
o
C
3
75
-55
2
o
C
3.0V
100
o
C)
3.5
2.5
125
2.5V
150
3
4
Figure 6. Body Diode Forward Voltage Variation
0.001
0.01
100
0.06
0.05
0.04
0.03
0.02
0.01
0.1
10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
2
0
V
V
Drain Current and Gate Voltage.
GS
T
GS
A
T
3.5V
= 0V
= 125
= 3.0V
A
= 25
Gate-to-Source Voltage.
V
5
0.2
o
SD
C
o
, BODY DIODE FORWARD VOLTAGE (V)
C
4.0V
V
4
GS
25
, GATE TO SOURCE VOLTAGE (V)
o
C
10
I
D
, DRAIN CURRENT (A)
0.4
4.5V
T
A
= 125
-55
15
o
6
C
o
C
5.0V
0.6
20
6.0V
8
FDS6900AS Rev B (X)
0.8
25
I
D
10V
= 4A
30
10
1