m52d64164a Elite Semiconductor Memory Technology Inc., m52d64164a Datasheet - Page 16

• Manufacturer Part Number: m52d64164a
• Description: 1m X 16 Bit X 4 Banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
CBR (auto) refresh command
generated internally.
activate command.
M52D64164A cannot accept any other command.
Self refresh entry command
When CKE goes to high, the M52D64164A exits the self refresh mode.
so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
This command terminates the current burst operation.
Burst stop is valid at every burst length.
Elite Semiconductor Memory Technology Inc.
This command is a request to begin the CBR refresh operation. The refresh address is
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a row
During t
After the command execution, self refresh operation continues while CKE remains low.
During self refresh mode, refresh interval and refresh operation are performed internally,
( CS , RAS , CAS = Low, WE , CKE = High)
( CS , RAS , CAS , CKE = Low , WE = High)
( CS , WE = Low, RAS , CAS = High)
RFC
period (from refresh command to refresh or activate command), the
Publication Date: Jul. 2009
Revision: 1.6
M52D64164A
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