as6c2008a Alliance Memory, Inc, as6c2008a Datasheet
as6c2008a
Related parts for as6c2008a
as6c2008a Summary of contents
Page 1
... CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2008A is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008A operates from a single power supply of 2 ...
Page 2
... DQ1 14 19 DQ2 15 18 Vss 16 17 SOP/P-DIP Vcc A15 CE2 WE# A13 A11 A13 4 A9 WE# 5 CE2 6 A11 A15 7 AS6C2008A OE# Vcc 8 A17 9 A10 A16 10 A14 11 CE# A12 DQ7 DQ6 A4 16 DQ5 DQ4 DQ3 ...
Page 3
... A T STG OUT T SOLDER CE2 OE# WE Alliance Memory Inc. AS6C2008A RATING UNIT -0.5 to 6 -40 to 85(I grade) ℃ -65 to 150 ℃ 260 ℃ SUPPLY CURRENT I/O OPERATION High-Z I SB1 High-Z I SB1 High-Z ...
Page 4
Supply Voltage Input High Voltage Input Low Voltage V IL Input Leakage Current I LI Output Leakage I LO Current Output High Voltage V OH Output Low Voltage Average Operating ...
Page 5
... X 8 BIT LOW POWER CMOS SRAM 256K X 8 BIT LOW POWER CMOS SRAM AS6C2008A-55 SYM ACE CLZ t OLZ t CHZ t OHZ t OH SYM. AS6C2008A- WHZ Alliance Memory Inc. AS6C2008A UNIT UNIT Page ...
Page 6
Controlled) (1,2) (CE# and CE2 and OE# Controlled) (1,3,4,5) Address CE# CE2 OE# High-Z Dout Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low 3.Address must be valid prior to ...
Page 7
Controlled) (1,2,3,5,6) (CE# and CE2 Controlled) (1,2,5,6) Notes : 1.WE#, CE# must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE#, high CE2, low WE#. 3.During a ...
Page 8
V for Data Retention Data Retention Current I DR Chip Disable to Data t CDR Retention Time Recovery Time Read Cycle Time RC * Vcc(min.) Vcc t CDR V IH CE# Vcc(min.) Vcc ...
Page 9
UNIT INCH(BASE) MM(REF) SYM. A 0.047 (MAX) 1.20 (MAX) A1 0.004 ± 0.002 0.10 ± 0.05 A2 0.039 ± 0.002 1.00 ± 0.05 0.008 + 0.002 0. 0.001 c 0.005 (TYP) 0.127 (TYP) D 0.724 ± ...
Page 10
SYM. AUGUST 12° (2x "A" 17 "A" DATAIL VIEW 32 UNIT INCH(BASE) MM(REF) A 0.049 (MAX) 1.25 (MAX) A1 0.005 ± 0.002 0.130 ± 0.05 A2 0.039 ± 0.002 1.00 ...
Page 11
UNIT INCH.(BASE) MM(REF) SYM. A 0.118 (MAX) 2.997 (MAX) A1 0.004(MIN) 0.102(MIN) A2 0.111(MAX) 2.82(MAX) b 0.016(TYP) 0.406(TYP) c 0.008(TYP) 0.203(TYP) D 0.817(MAX) 20.75(MAX) E 0.445 ± 0.005 11.303 ± 0.127 E1 0.555 ± 0.012 14.097 ± 0.305 e 0.050(TYP) ...
Page 12
SYM. Note : D/E1/S dimension do not include mold flash. AUGUST UNIT INCH(BASE) A1 0.001 (MIN) A2 0.150 ± 0.005 3.810 ± 0.127 B 0.018 ± 0.005 0.457 ± 0.127 D 1.650 ± 0.005 41.910 ± 0.127 E 0.600 ± ...
Page 13
...
Page 14
AS6C 2008 Device Number low power Access SRAM prefix Time -55 X Package Option S = 32pin 450 mil SOP ST = 32pin sTSOP(8 x 13. 32pin TSOP - 1(8 x 20mm) ...
Page 15
... Alliance Memory, Inc 511 Taylor Way, San Carlos, CA 94070, USA Phone: 650-610-6800 Fax: 650-620-9211 www.alliancememory.com ...