as6c2008a Alliance Memory, Inc, as6c2008a Datasheet - Page 6

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as6c2008a

Manufacturer Part Number
as6c2008a
Description
512k X 8 Bit Low Po 256k X 8 Bit Low Power Cmos Sram
Manufacturer
Alliance Memory, Inc
Datasheet
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low
3.Address must be valid prior to or coincident with CE# = low
4.t
5.At any given temperature and voltage condition, t
Address
CLZ
Dout
CE#
CE2
OE#
, t
OLZ
, t
CHZ
and t
(Address Controlled) (1,2)
(CE# and CE2 and OE# Controlled) (1,3,4,5)
OHZ
are specified with C
High-Z
t
CLZ
t
AA
L
t
= 5pF. Transition is measured ±500mV from steady state.
OLZ
t
ACE
CHZ
t
RC
t
OE
is less than t
.,
CE2 = high
,
CE2 = high; otherwise t
CLZ
.
, t
OHZ
Data Valid
is less than t
AA
t
OH
t
CHZ
is the limiting parameter.
t
OLZ.
OHZ
High-Z

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