bs62uv256 Brillance Semiconductor, bs62uv256 Datasheet

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bs62uv256

Manufacturer Part Number
bs62uv256
Description
Ultra Low Power Cmos Sram 32k X 8 Bit
Manufacturer
Brillance Semiconductor
Datasheet
n FEATURES
Ÿ Wide V
Ÿ Ultra low power consumption :
Ÿ High speed access time :
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
n POWER CONSUMPTION
n PIN CONFIGURATIONS
R0201-BS62UV256
Brilliance Semiconductor, Inc.
V
V
-10
-15
BS62UV256DC
BS62UV256PC
BS62UV256SC
BS62UV256TC
BS62UV256PI
BS62UV256SI
BS62UV256TI
CC
CC
PRODUCT
= 2.0V
= 3.0V
FAMILY
CC
low operation voltage : 1.8V ~ 3.6V
VCC
A13
A14
A12
A11
WE
OE
A9
A8
A7
A6
A5
A4
A3
GND
DQ0
DQ1
DQ2
Operation current : 15mA (Max.) at 150ns
Standby current :
Operation current : 25mA (Max.) at 150ns
Standby current :
100ns (Max.)
150ns (Max.)
A14
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TEMPERATURE
BS62UV256TC
BS62UV256TI
-40
OPERATING
+0
BS62UV256PC
BS62UV256PI
BS62UV256SC
BS62UV256SI
Commercial
O
Industrial
O
C to +70
C to +85
Pb-Free and Green package materials are compliant to RoHS
Ultra Low Power CMOS SRAM
32K X 8 bit
0.5mA (Max.) at 1MHz
0.005uA(Typ.) at 25
0.01uA (Typ.) at 25
1mA (Max.) at 1MHz
O
28
27
26
25
24
23
22
21
20
19
18
17
16
15
O
C
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
V
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
0.4uA
0.7uA
CC
=3.0V
reserves the right to change products and specifications without notice.
STANDBY
(I
CCSB1
O
O
C
C
, Max)
V
0.4uA
0.7uA
CC
=2.0V
1
POWER DISSIPATION
n DESCRIPTION
The BS62UV256 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 32,768 by 8 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.005uA and maximum access time of 150ns in 2.0V
operation.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62UV256 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62UV256 is available in DICE form, JEDEC standard 28 pin
330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
(normal type).
n BLOCK DIAGRAM
0.9mA
1.0mA
1MHz
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A13
A11
GND
A5
A6
A7
A8
A9
WE
OE
V
CE
V
CC
CC
=3.0V
Address
20mA
25mA
Buffer
Input
f
Max.
Control
Operating
8
8
(I
CC
, Max)
9
0.6mA
0.8mA
Output
1MHz
Buffer
Buffer
Input
Data
Data
Decoder
Row
V
CC
8
=2.0V
8
BS62UV256
512
10mA
15mA
f
Max.
A4
Address Input Buffer
Column Decoder
A3 A2 A1 A0 A10
Memory Array
Write Driver
Column I/O
Sense Amp
Revision
Sep.
512X512
DICE
PDIP-28
SOP-28
TSOP-28
PDIP-28
SOP-28
TSOP-28
PKG TYPE
512
64
6
2006
2.6

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bs62uv256 Summary of contents

Page 1

... LOW output enable (OE) and three-state output drivers. The BS62UV256 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV256 is available in DICE form, JEDEC standard 28 pin 330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP (normal type). POWER DISSIPATION ...

Page 2

... UNITS (2) -0.5 to 5.0 V Commercial O -40 to +125 C O -60 to +150 C n CAPACITANCE 1 SYMBOL PAMAMETER CONDITIONS MAX. UNITS This parameter is guaranteed and not 100% tested. 2 BS62UV256 Function I/O OPERATION V CURRENT CC High Z I CCSB High Z D OUT D IN AMBIENT RANG TEMPERATURE ...

Page 3

... +85 A TEST CONDITIONS CE≧V -0.2V, CC ≧V ≦0.2V V -0. CE≧V -0.2V, CC ≧V ≦0.2V V -0. See Retention Waveform Data Retention Mode ≧1. CDR CE≧ BS62UV256 (1) MIN. TYP. 1 =2.0V CC (2) -0 =3.0V CC 1.4 V =2. 2.2 V =3. =2. =3.0V CC 1.6 V =2.0V ...

Page 4

... Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Select to Output Low Z Output Enable to Output Low Z Chip Select to Output High Z Output Enable to Output High Z Data Hold from Address Change 4 BS62UV256 INPUTS OUTPUTS MUST BE MUST BE STEADY STEADY MAY CHANGE WILL BE CHANGE FROM “ ...

Page 5

... Transition is measured ± 500mV from steady state with C The parameter is guaranteed but not 100% tested. R0201-BS62UV256 ACS (5) t CLZ OLZ t ACS (5) t CLZ . IL = 5pF BS62UV256 t OH (5) t CHZ t OH (5) t OHZ (1,5) t CHZ Revision 2.6 Sep. 2006 ...

Page 6

... Write to Output High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active ( (4,10) t OHZ 6 BS62UV256 CYCLE TIME : 100ns CYCLE TIME : 150ns MIN. TYP. MAX. MIN. TYP. 100 -- -- 150 -- 100 -- -- 150 -- 100 -- ...

Page 7

... Transition is measured ± 500mV from steady state with C The parameter is guaranteed but not 100% tested. 11 measured from the later of CE going low to the end of write. CW R0201-BS62UV256 t WC ( (4,10) t WHZ ). = 5pF BS62UV256 t ( (8,9) DH Revision Sep. (8) 2.6 2006 ...

Page 8

... PACKAGE DIMENSIONS SOP - 28 R0201-BS62UV256 0.020 ± 0.005X45° b WITH PLATING BASE METAL 8 BS62UV256 SPEED 10: 100ns 15: 150ns PKG MATERIAL -: Normal G: Green, RoHS Compliant P: Pb free, RoHS Compliant GRADE + ...

Page 9

... SEATING PLANE 15 12°(2x "A" DATAIL VIEW b WITH PLATING BASE METAL SECTION A-A 9 BS62UV256 UNIT INCH MM SYMBOL A 0.0433±0.004 1.10±0.10 A1 0.0045±0.0026 0.115±0.065 A2 0.039±0.002 1.00±0.05 b 0.009±0.002 0.22±0.05 b1 0.008±0.001 0.20± ...

Page 10

... C-grade - from 0.4uA to 0.7uA for I-grade Revised I CCDR - from 0.1uA to 0.4uA for C-grade - from 0.2uA to 0.7uA for I-grade R0201-BS62UV256 C to – sepc. sepc. 10 BS62UV256 Draft Date Remark Jan. 13, 2006 May. 25, 2006 Sep. 10, 2006 Revision 2.6 Sep. 2006 ...

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