blf6g20-180rn NXP Semiconductors, blf6g20-180rn Datasheet

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blf6g20-180rn

Manufacturer Part Number
blf6g20-180rn
Description
Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet

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BLF6G20-180RN
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1. Product profile
CAUTION
1.1 General description
1.2 Features
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical RF performance at T
[1]
I
I
I
I
I
I
I
I
Mode of operation
2-carrier WCDMA
BLF6G20-180RN;
BLF6G20LS-180RN
Power LDMOS transistor
Rev. 01 — 17 November 2008
Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 30 V and an I
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 40 W
Power gain = 17.2 dB
Efficiency = 27 %
IMD3 = 41 dBc
ACPR = 38 dBc
Typical performance
f
(MHz)
1930 to 1990
case
= 25 C in a class-AB production test circuit.
Dq
of 1400 mA:
V
(V)
30
DS
P
(W)
40
L(AV)
G
(dB)
17.2
p
(%)
27
D
Product data sheet
IMD3
(dBc)
38
[1]
ACPR
(dBc)
41
[1]

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blf6g20-180rn Summary of contents

Page 1

... BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier WCDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...

Page 2

... Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-180RN (SOT502A BLF6G20LS-180RN (SOT502B [1] Connected to fl ...

Page 3

... Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G20-180RN and BLF6G20LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G20-180RN_20LS-180RN_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from T case junction to case ...

Page 4

... 1400 mA 1960 MHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G20-180RN_20LS-180RN_1 Product data sheet (dB 1400 mA 1960 MHz. ...

Page 5

... 1400 mA 1960 MHz ( 5 MHz carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information V GG input Fig 6. BLF6G20-180RN_20LS-180RN_1 Product data sheet 001aai654 40 IMD, ACPR D (dBc) (%) (W) L(AV) Fig 5 ...

Page 6

... C11 multilayer ceramic chip capacitor C13 multilayer ceramic chip capacitor C14 multilayer ceramic chip capacitor C21, C22 multilayer ceramic chip capacitor C23, C24 multilayer ceramic chip capacitor C25 electrolytic capacitor BLF6G20-180RN_20LS-180RN_1 Product data sheet C11 ...

Page 7

... Table 8. List of components (see The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with Component Description L1 ferrite SMD bead R1 SMD resistor R2 SMD resistor [1] Solder vertically. BLF6G20-180RN_20LS-180RN_1 Product data sheet Figure 6 and Figure 7) …continued Value - 2.7 6.8 Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor = 3 ...

Page 8

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 19.61 0.08 0.186 0.505 0.006 0.788 inches 0.135 0.495 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A BLF6G20-180RN_20LS-180RN_1 Product data sheet scale 19.96 9.50 9.53 19.94 1.14 5.33 19 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLF6G20-180RN_20LS-180RN_1 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...

Page 10

... PAR PDPCH RF VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G20-180RN_20LS-180RN_1 BLF6G20-180RN_20LS-180RN_1 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications ...

Page 11

... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G20-180RN_20LS-180RN_1 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-180RN_20LS-180RN_1 All rights reserved. Date of release: 17 November 2008 ...

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