blf6g20-180rn NXP Semiconductors, blf6g20-180rn Datasheet - Page 5

• Manufacturer Part Number: blf6g20-180rn
• Description: Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLF6G20-180RN_20LS-180RN_1
Product data sheet
Fig 4.
(dB)
G
p
19
18
17
16
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
DS
= 30 V; I
7.4 2-carrier W-CDMA
G
D
p
Dq
20
= 1400 mA; f = 1960 MHz ( 5 MHz);
Fig 6.
input
V
GG
The drawing is not to scale.
Test circuit for operation at 2000 MHz
C11
40
P
C4
L(AV)
R2
001aai654
C8
C7
C6
C5
(W)
Rev. 01 — 17 November 2008
60
R1
40
30
20
10
(%)
C10
D
C9
C1
C2
Fig 5.
C3
ACPR
(dBc)
IMD,
30
35
40
45
50
55
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
DS
BLF6G20(LS)-180RN
= 30 V; I
Dq
20
= 1400 mA; f = 1960 MHz ( 5 MHz);
C15
C16
ACPR
IMD3
Power LDMOS transistor
C12
V
DD
C19
40
C17
C25
C13
P
L(AV)
© NXP B.V. 2008. All rights reserved.
C20
C18
001aai655
(W)
C14
C22
C21
60
001aai656
output
C23
C24
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