s71gl128nc0 Meet Spansion Inc., s71gl128nc0 Datasheet - Page 67

• Manufacturer Part Number: s71gl128nc0
• Description: Stacked Multi-chip Product Mcp 512/256/128 Megabit 32/16/8 M X 16-bit Cmos 3.0 Volt-only Mirrorbittm Page-mode Flash Memory With 64 Megabit 4m X 16-bit Psram
• Manufacturer: Meet Spansion Inc.

December 15, 2004 S29GLxxxN_MCP_A1
Reading Array Data
Reset Command
Autoselect Command Sequence
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the
erase-suspend-read mode, after which the system can read data from any non-
erase-suspended sector. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same ex-
ception. See the Erase Suspend/Erase Resume Commands section for more
information.
The system must issue the reset command to return the device to the read (or
erase-suspend-read) mode if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode. See the next section, Reset
Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations sec-
tion for more information. The Read-Only Operations–“AC Characteristics”
section provides the read parameters, and
Writing the reset command resets the device to the read or erase-suspend-read
mode. Address bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until
the operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to the
read mode. If the program command sequence is written while the device is in
the Erase Suspend mode, writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to the read mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to the read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the sys-
tem must write the Write-to-Buffer-Abort Reset command sequence to reset the
device for the next operation.
The autoselect command sequence allows the host system to access the manu-
facturer and device codes, and determine whether or not a sector is protected.
Table 12
to that shown in
V
ID
on address pin A9. The autoselect command sequence may be written to an
shows the address and data requirements. This method is an alternative
A d v a n c e
Table
5, which is intended for PROM programmers and requires
S29GLxxxN MirrorBit
I n f o r m a t i o n
TM
Figure 11
Flash Family
shows the timing diagram.
67