s71pl129ja0 Meet Spansion Inc., s71pl129ja0 Datasheet - Page 15

• Manufacturer Part Number: s71pl129ja0
• Description: Stacked Multi-chip Product Mcp Flash Memory And Psram 128 Megabit 8m X 16-bit Cmos 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory With 64/32/16 Megabit 4m/2m/1m X 16-bit Pseudo-static Ram
• Manufacturer: Meet Spansion Inc.

A d v a n c e
I n f o r m a t i o n
write cycles to program data instead of four. Device erasure occurs by executing
the erase command sequence.
The host system can detect whether a program or erase operation is complete by
reading the DQ7 (Data# P olling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V
detector that automat-
CC
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on
hold for any period of time to read data from, or program data to, any sector that
is not selected for erasure. T rue background erase can thus be achieved. If a read
is needed from the Secured Silicon Sector area (One Time Program area) after
an erase suspend, then the user must use the proper command sequence to
enter and exit this region.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consumption
is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The data is programmed using hot electron injection.
S29PL129J for MCP
15
June 4, 2004 S29PL129J_MCP_00_A0