m36l0t8060b1 STMicroelectronics, m36l0t8060b1 Datasheet - Page 16

• Manufacturer Part Number: m36l0t8060b1
• Description: 256 Mbit 16 Mb , Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit Psram, 1.8 V Core, 3 V I/o Supply, Multichip Package
• Manufacturer: STMicroelectronics

DC and AC parameters
5
16/22
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Figure 4.
1. V
V
V
V
V
V
environment)
Load capacitance (C
Output circuit resistors (R
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
PPF
PPF
DDF
CCP
DDQF
DDQ
supply voltage (Factory environment)
supply voltage (Application
supply voltage
supply voltage
supply voltage
means V
Operating and AC measurement conditions
AC measurement I/O waveform
DDQF
Parameter
L
= V
)
CCP
1
V DDQ
, R
.
0V
2
)
conditions. Designers should check that the
–0.4
Min
1.7
2.7
8.5
Flash memory
–
0 to V
V
DDQF
16.7
30
V
DDQF
DDQF
/2
Max
1.95
3.1
9.5
M36L0T8060T1, M36L0T8060B1
–
5
+0.4
V DDQ /2
AI06161
Min
2.7
–
–
–
–
5
0 to V
PSRAM
V
16.7
CCP
50
CCP
/2
Max
3.1
–
–
–
–
Unit
pF
k
ns
V
V
V
V
V
V
V