m36llr8760d1 STMicroelectronics, m36llr8760d1 Datasheet - Page 14

• Manufacturer Part Number: m36llr8760d1
• Description: 256 + 128 Mbit Multiple Bank, Multi-level, Burst Flash Memory 64 Mbit Burst Psram, 1.8v Supply, Multi-chip Package
• Manufacturer: STMicroelectronics

M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
Table 7. Flash 2 DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
14/19
I
Symbol
I
DD6
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
(1,2)
(1)
(1)
(1)
(1)
DDF2
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=5MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
(Reset)
Supply Current (Standby)
Supply Current (Automatic Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
PP
PP
PP
PP
Dual Operation current is the sum of read and program or erase currents.
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Synchronous Read (Continuous
Asynchronous Read in another
Program/Erase in one Bank,
Program/Erase in one Bank,
f=54MHz) in another Bank
0V
E = V
E = V
0V
RP = V
E = V
E = V
Test Condition
V
V
V
V
Continuous
V
V
V
V
V
V
V
16 Word
PP
PP
PP
PP
4 Word
8 Word
PP
PP
PP
PP
PP
PP
V
K=V
K=V
DDQF
DDQF
OUT
Bank
IL
IL
IN
= V
= V
= V
= V
SS
, G = V
, G = V
= V
= V
= V
= V
SS
SS
V
V
± 0.2V
PPH
PPH
PPH
PPH
V
± 0.2V
± 0.2V
DD
DD
DD
DD
DD
DD
V
DDQF
DDQF
IH
IH
Typ
0.2
0.2
0.2
0.2
13
16
18
23
25
25
25
25
10
10
23
35
25
8
8
2
2
Max
±1
±1
15
18
20
25
27
70
70
70
20
25
20
25
40
52
70
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA