k4t51043qe-zlcc Samsung Semiconductor, Inc., k4t51043qe-zlcc Datasheet - Page 13

• Manufacturer Part Number: k4t51043qe-zlcc
• Description: 512mb E-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

7.2 Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
7.3 Input DC Logic Level
7.4 Input AC Logic Level
7.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
K4T51043QE
K4T51083QE
K4T51163QE
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
standard.
max for falling edges as shown in the below figure.
transitions.
V
SWING(MAX)
V
Symbol
V
Symbol
IH
SLEW
IL
Symbol
V
Symbol
V
TOPER
V
REF
IH
(AC)
IL
(AC)
(DC)
(DC)
AC input logic high
AC input logic low
Parameter
DC input logic high
DC input logic low
Parameter
Input signal maximum peak to peak swing
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Input reference voltage
Parameter
V
delta TF
REF
Condition
Min.
+ 0.250
DDR2-400, DDR2-533
-
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
IL
+ 0.125
(AC) max
IL
13 of 45
V
(AC) to V
REF
Max.
-
- 0.250
IH
delta TR
IH/IL
REF
(AC) on the positive transitions and V
V
V
Rising Slew =
REF
(AC) level applied to the device under test.
DDQ
to V
Max.
Rating
0 to 95
- 0.125
IH
+ 0.3
(AC) min for rising edges and the range from V
V
0.5 * V
REF
Value
Min.
1.0
1.0
+ 0.200
DDR2-667, DDR2-800
V
DDQ
IH
(AC) min - V
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
Units
Units
REF
V
V
V
°C
REF
Units
Max.
V/ns
IH
- 0.200
V
V
(AC) to V
DDR2 SDRAM
Rev. 1.8 July 2007
IL
(AC) on the negative
Notes
Notes
1, 2
REF
Notes
Units
2, 3
V
V
1
1
to V
IL
(AC)