k4t51043qe-zlcc Samsung Semiconductor, Inc., k4t51043qe-zlcc Datasheet - Page 33

• Manufacturer Part Number: k4t51043qe-zlcc
• Description: 512mb E-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T51043QE
K4T51083QE
K4T51163QE
DQS
Note1
Hold Slew Rate
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
Rising Signal
V
V
V
V
V
V
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
max
max
V
V
V
V
V
V
V
min
min
DDQ
IH(ac)
IH(dc)
REF(dc)
IL(dc)
IL(ac)
SS
V
SS
max
max
=
min
min
dc to V
dc to V
region
region
tangent line [ V
REF
REF
∆TR
tDS
REF(dc)
tangent
line
33 of 45
- Vil(dc)max ]
tDH
Hold Slew Rate
Falling Signal
∆TR
nominal
line
=
tangent line [ Vih(dc)min - V
tDS
tangent
line
tDH
∆TF
∆TF
nominal
line
DDR2 SDRAM
REF(dc)
Rev. 1.8 July 2007
]