mt18htf25672az Micron Semiconductor Products, mt18htf25672az Datasheet

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mt18htf25672az

Manufacturer Part Number
mt18htf25672az
Description
2gb, 4gb X72, Dr, Ecc 240-pin Ddr2 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM UDIMM
MT18HTF25672AZ – 2GB
MT18HTF51272AZ – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 2GB (256 Meg x 72), 4GB (512 Meg x 72)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Supports ECC error detection and correction
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1:
PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0
HTF18C256_512x72AZ.fm - Rev. A 9/09 EN
Speed
Grade
PC2-5300, PC2-6400, or PC2-8500
operation
-1GA
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= +1.7V to +3.6V
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
= +1.8V
Industry
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 7
1066
t
CK
CL = 6
2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
800
800
800
Data Rate (MT/s)
www.micron.com
CL = 5
667
800
667
667
1
Figure 1:
Options
• Operating temperature
• Package
• Frequency/CAS latency
Module height: 30mm (1.18in)
– Commercial (0°C ≤ T
– 240-pin DIMM (halogen-free)
– 1.875ns @CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
CL = 4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
533
533
533
533
533
400
1. Contact Micron for industrial temperature
module offerings.
240-Pin UDIMM (MO-237 R/C G)
CL = 3
400
400
400
400
400
400
C
13.125
1
t
≤ +85°C)
(ns)
12.5
RCD
15
15
15
15
©2009 Micron Technology, Inc. All rights reserved.
13.125
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-1GA
-80E
-800
-667
Z
58.125
(ns)
57.5
t
60
60
60
55
RC

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mt18htf25672az Summary of contents

Page 1

... DDR2 SDRAM UDIMM MT18HTF25672AZ – 2GB MT18HTF51272AZ – 4GB For component data sheets, refer to Micron’s Web site: Features • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, PC2-6400, or PC2-8500 • 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...

Page 2

... MT18HTF51272AZ-80E__ MT18HTF51272AZ-800__ MT18HTF51272AZ-667__ Notes: 1. All part numbers end with a two-place code (not shown) that designating component and PCB revisions. Consult factory for current revision codes. Example: MT18HTF25672AZ- 667H1. 2. For component data sheets, refer to Micron’s Web PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0 HTF18C256_512x72AZ.fm - Rev. A 9/09 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 ...

Page 4

... Center-aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. SDA I/O Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of the SPD EEPROM on the module on the Supply Power supply: 1.8V ±0.1V. The component V ...

Page 5

... Table 7: Component DQ to Module Pin Map, Front Component Component Module Number PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0 HTF18C256_512x72AZ.fm - Rev. A 9/09 EN 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM ...

Page 6

... Table 8: Component DQ to Module Pin Map, Back Component Component Module Number DQ 0 U11 U13 U15 U17 U19 PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0 HTF18C256_512x72AZ.fm - Rev. A 9/09 EN ...

Page 7

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0 DQS0 DQS0 DM0 DM CS# DQS DQS# DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 ...

Page 8

... General Description The MT18HTF25672AZ and MT18HTF51272AZ DDR2 SDRAM modules are high-speed, CMOS, dynamic random-access 2GB and 4GB memory modules organized in x72 con- figurations. These DDR2 SDRAM modules use internally configured 8-bank (1Gb, 2Gb) DDR2 SDRAM devices. DDR2 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 9 may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Micron encourages designers to simulate the signal characteristics of the system’s mem- ory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 11

... DD HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0 HTF18C256_512x72AZ ...

Page 12

... DD valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0 HTF18C256_512x72AZ ...

Page 13

Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... TYP 123.0 (4.84) TYP BACK VIEW U13 U14 U15 U16 U17 5.0 (0.197) TYP 63.0 (2.48) TYP 14 Module Dimensions U8 U9 30.5 (1.2) 29.85 (1.175) 17.78 (0.7) TYP 10.0 (0.394) TYP PIN 120 U18 U19 PIN 121 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2009 Micron Technology, Inc. All rights reserved. ...

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