k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 12

• Manufacturer Part Number: k9f1g08q0a
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0A
K9F1G08U0A
AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time
(Read/Program/Erase)
Parameter
Symbol
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
CLR
t
REA
CEA
RHZ
CHZ
REH
RST
WB
t
t
AR
RR
RP
RC
OH
IR
R
K9F1G08Q0A
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
12
Min
K9F1G08U0A
10
10
20
15
30
15
10
60
0
-
-
-
-
-
-
-
K9F1G08Q0A
5/10/500
100
25
30
45
30
20
FLASH MEMORY
-
-
-
-
-
-
-
-
-
(1)
Max
K9F1G08U0A
5/10/500
100
25
18
23
30
20
-
-
-
-
-
-
-
-
-
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s