k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 23

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k9f1g08q0a

Manufacturer Part Number
k9f1g08q0a
Description
128m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K9F1G08Q0A
Page Program Operation
K9F1G08U0A
CLE
CE
WE
ALE
RE
R/B
I/Ox
Input Command
SerialData
80h
t
WC
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Co.l Add1
Column Address
Col. Add2
Row Add1
Row Address
t
WC
Row Add2
m = 2112byte
t
ADL
1 up to m Byte
23
Din
N
Serial Input
t
WC
Din
M
Program
Command
10h
t
WB
FLASH MEMORY
t
PROG
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0

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