k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 8

• Manufacturer Part Number: k9f1g08q0a
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0A
K9F1G08U0A
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1G08X0A-XCB0
Voltage on any pin relative to V
Temperature Under
Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Parameter
K9F1G08X0A-XCB0
K9F1G08X0A-XIB0
K9F1G08X0A-XCB0
K9F1G08X0A-XIB0
Symbol
SS
V
V
CC
SS
CC,
+0.3V which, during transitions, may overshoot to V
1.70
Min
:
0
T
A
K9F1G08Q0A(1.8V)
=0 to 70 C, K9F1G08X0A-XIB0
Symbol
V
T
T
IN/OUT
V
Ios
BIAS
STG
CC
Typ.
1.8
0
8
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
Max
1.95
0
:
T
Min
2.7
A
0
=-40 to 85 C)
-10 to +125
-40 to +125
-65 to +150
K9F1G08U0A(3.3V)
Rating
CC
+2.0V for periods <20ns.
5
3.3V/2.65V DEVICE
Typ.
3.3
FLASH MEMORY
0
-0.6 to + 4.6
-0.6 to + 4.6
Max
3.6
0
Unit
V
V
Unit
mA
V
C
C