k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 9

• Manufacturer Part Number: k9f1g08q0a
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0A
K9F1G08U0A
DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Current
IL
can undershoot to -0.4V and V
Parameter
Page Read with Serial
Access
Program
Erase
Symbol
I
IH
OL
I
I
I
I
I
V
V
V
V
can overshoot to V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
IH*
OH
LI
IL*
OL
1
2
3
1
2
tRC=50ns, CE=V
I
CE=V
CE=V
WP=0V/V
V
V
K9F1G08Q0A :I
K9F1G08U0A :I
K9F1G08Q0A :I
K9F1G08U0A :I
K9F1G08Q0A :V
K9F1G08U0A :V
OUT
IN
OUT
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
IH
CC
Test Conditions
, WP=0V/V
-0.2,
CC
CC
+0.4V for durations of 20 ns or less.
-
-
-
-
(Recommended operating conditions otherwise noted.)
OH
OL
OH
OL
OL
OL
IL
=2.1mA
=100uA
=-400 A
9
CC
=-100 A
=0.4V
=0.1V
0.8xV
-0.3
-0.1
Min
Vcc
3
-
-
-
-
-
-
-
-
K9F1G08Q0A
CC
1.8V
Typ
10
10
10
10
4
-
-
-
-
-
-
-
0.2xVcc
Max
+0.3
V
0.1
20
20
20
50
1
10
10
CC
-
-
FLASH MEMORY
0.8xVcc
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
K9F1G08U0A
3.3V
Typ
15
15
15
10
10
-
-
-
-
-
-
-
0.2xVcc
Max
+0.3
V
0.4
30
30
30
50
10
10
1
CC
-
-
Unit
mA
mA
V
A