m470l1624bt0 Samsung Semiconductor, Inc., m470l1624bt0 Datasheet - Page 2

• Manufacturer Part Number: m470l1624bt0
• Description: 128mb Ddr Sdram Module
• Manufacturer: Samsung Semiconductor, Inc.

Revision History
M470L1624BT0
Revision 0.0 (Apr. 2001)
1. First release.
Revision 0.1 (June. 2001)
Revision 0.2 (Dec. 2001)
- Deleted typical current in IDD spec. table
- Included address and control input setup/hold time(tIS/tIH) at slow slew rate in DDR200/266 AC specification
- Deleted Exit self refresh to write command(tXSW) in DDR200/266 AC specification
- Rename tXSA(exit self refresh to bank active command) to tXSNR(exit self refresh to non read command) at DDR200/266
- Rename tXSR(exit self refresh to read command) to tXSRD at DDR200/266
- Rename tWPREH(DQS in hold time) to tWPRE at DDR200/266
- Rename tREF(Refresh interval time) to tREFI at DDR200/266
- Changed tWR value from 2tCK to 15ns.
--Rename tCDLR(Write data out to Read command) t0 tWTR
- Added tDAL(tWR+tRP)
- Add derating values for the specifications if the single-ended clock skew rate is less than 1.0V/ns in page 47.
- Revised "Absolute maximum rating" table in page 38.
- Revised AC parameter table
. Changed "Voltage on VDDQ supply relative to VSS" value from -0.5~3.6V to -1~3.6V
. Changed "power dissipation" value from 1.0W to 1.5W.
1. Changed module current speificaton
2. Changed typo size on module PCB in package dimesions. (from 2.6mm to 3mm).
3. Changed AC parameter table.
tWPST
tPDEX
(tCK)
tHZ
tLZ
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR266A
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
0.25
Min.
DDR266B
From
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR200
tACmax
tACmax
-400ps
-400ps
Max.
7.5ns
-0.75
-0.75
Min.
0.4
DDR266A
200pin DDR SDRAM SODIMM
+0.75
+0.75
Max.
0.6
7.5ns
-0.75
-0.75
Min.
0.4
DDR266B
To
+0.75
+0.75
Max.
Rev. 0.2 Dec. 2001
0.6
10ns
Min.
-0.8
-0.8
0.4
DDR200
Max.
+0.8
+0.8
0.6