tpcp8504 TOSHIBA Semiconductor CORPORATION, tpcp8504 Datasheet - Page 2

• Manufacturer Part Number: tpcp8504
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Figure 1. Circuit configuration
Electrical Characteristics
Note 4: ● on lower left on the marking indicates Pin 1.
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
Figure 3. Switching Time Test Circuit & Timing Chart
※ Weekly code: (Three digits)
IB1
Characteristics
Duty cycle ＜1%
20μs
8 7 6 5
1 2 3 4
Rise time
Storage time
Fall time
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
(One low-order digits of calendar year)
Year of manufacture
IB2
(Ta = 25°C)
Input
V
V
V
Symbol
h
h
(top view)
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
t
stg
t
t
ob
r
f
IB1
IB2
(1)
(2)
V
V
I
V
V
I
I
V
See Figure 3 circuit diagram
V
I
C
C
C
B1
CB
EB
CE
CE
CB
CC
= 10 mA, I
= 0.6 A, I
= 0.6 A, I
VCC
2
= −I
= 7 V, I
= 20 V, I
= 2 V, I
= 2 V, I
= 10 V, I
∼ − 6 V, R
RL
B2
Output
Test Condition
= 12 mA
B
B
C
C
C
B
E
E
L
= 12 mA
= 12 mA
= 0
= 0.2 A
= 0.6 A
= 0
= 10 Ω
= 0
= 0, f = 1MHz
Figure 2. Marking
8 7 6 5
1 2 3 4
8504
(Weekly code)
Min
400
200
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Lot No.
※
Typ.
(Note 4)
215
10
60
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8504
2006-11-13
1000
0.12
Max
100
100
Type
1.1
⎯
⎯
⎯
⎯
⎯
⎯
Unit
nA
nA
pF
ns
V
V
V