tpcp8504 TOSHIBA Semiconductor CORPORATION, tpcp8504 Datasheet - Page 4
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tpcp8504
Manufacturer Part Number
tpcp8504
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8504.pdf
(5 pages)
0.01
0.1
10
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulsed)*
I C max (Continuous)
Ta = 25°C
Collector−emitter voltage V
100 ms*
2
).
1000
100
0.001
10
DC operation
Ta = 25°C
10 s*
1
Safe operating area
1
10 ms*
0.01
1 ms*
10
100 μs*
V CEO max
CE
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
0.1
(V)
Pulse width t
100
r
th
1
– t
4
w
w
(s)
10
100
2
1000
)
TPCP8504
2006-11-13