tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet

tpcp8403

Manufacturer Part Number

tpcp8403

Description

Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCP8403.pdf (11 pages)

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Portable Equipment Applications

Motor Drive Applications

DC-DC Converter Applications

•

Absolute Maximum Ratings

Lead(Pb)-Free

Low drain-source ON resistance : P Channel R

High forward transfer admittance : P Channel |Y

Low leakage current : P Channel I

Enhancement mode

: P Channel V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain

current

Drain power

dissipation

(t = 5 s)

Drain power

dissipation

(t = 5 s)

Single pulse avalanche energy

(Note 4)

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: For Notes 1 to 6, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with caution.

N Channel V

(Note 2a)

(Note 2b)

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

Pulse

Single-device operation

Single-device value at

dual operation (Note 3b)

Single-device operation

Single-device value at

dual operation (Note 3b)

= −0.8 to −2.0 V (V

= 1.3 to 2.5 V (V

(Note 2a, 3b, 5)

= 20 kΩ)

N Channel I

(Note 3a)

(Note 1)

N Channel R

DSS

(Ta = 25°C)

Symbol

= 10 V, I

N Channel |Y

DGR

GSS

D (1)

D (2)

D (1)

D (2)

DSS

stg

TPCP8403

= −10 V, I

= −10 μA (V

= 10 μA (V

−13.6

−3.4

1.48

1.23

0.58

0.36

−3.4

−40

±20

DS (ON)

= 1mA)

5.5

DS (ON)

−55~150

= −1mA)

Rating

| = 6.0 S (typ.)

0.12

| = 8.6 S (typ.)

150

= 40 V)

= −40 V)

= 55 mΩ (typ.)

= 31 mΩ (typ.)

18.8

1.48

1.23

0.58

0.36

10.6

±20

4.7

Unit

°C

Weight: 0.017 g (typ.)

Circuit Configuration

Marking

JEDEC

JEITA

TOSHIBA

1．Source1

2．Gate1

3．Source2

4．Gate2

0.475

0.33±0.05

0.025

0.65

8403

(Note 6)

2.9±0.1

5．Drain2

6．Drain2

7．Drain1

8．Drain1

0.17±0.02

0.05

2-3V1G

TPCP8403

2006-11-13

―

1.12

0.28

0.8±0.05

＊

Lot No.

+0.1

+0.13

+0.1

-0.11

Unit: mm

0.05

-0.12

Related parts for tpcp8403

tpcp8403 Summary of contents

Page 1

... D (1) P 1.23 1.23 D (2) P 0.58 0.58 D (1) P 0.36 0.36 D (2) E 5.5 10 −3 150 ch −55~150 T stg 1 TPCP8403 0.33±0.05 0. 0.475 0.65 2.9±0.1 0.025 S S 0.17±0.02 1．Source1 5．Drain2 2．Gate1 6．Drain2 V 3．Source2 7．Drain1 V 4．Gate2 8．Drain1 V JEDEC ― A JEITA ― TOSHIBA 2-3V1G Weight: 0 ...

Page 2

... R 101.6 th (ch-a) (2) R 215.5 th (ch-a) (1) (Note 3a) °C/W R 347.2 th (ch-a) (2) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) = 25°C (initial 0.5 mH Ω 25°C (initial 0.5 mH Ω TPCP8403 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = −3 4 2006-11-13 ...

Page 3

... −3 gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −3 DSF TPCP8403 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ −40 ⎯ ⎯ −25 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP 4 DSF TPCP8403 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ ⎯ 40 ⎯ 15 ⎯ 1.3 2.5 ⎯ ⎯ 4.3 8.6 ⎯ ...

Page 5

... Tc = 25°C Pulse test -8 -2 -2.0 0 -1.6 (V) DS -1.0 -0.8 -0.6 -0.4 -0 (V) GS -1000 -100 -10 -0.1 -10 -100 (A) 5 TPCP8403 I – Common source 3 25°C 3.8 Pulse test 3.2 4.5 3 2 Drain−source voltage V ( – Common source Ta= 25℃ ...

Page 6

... C oss -1 C rss -0 -10 -100 -80 (V) DS -40 (Note 2a) (Note 3b) -30 (Note 2b) (Note 3a) (Note 3b) -20 -10 0 160 200 0 6 TPCP8403 I – Common source Ta= 25℃ Pulse test - 0.4 0.8 1.2 Drain−source voltage V ( – Common source -10 V ...

Page 7

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width DSS max -10 -100 ( TPCP8403 (4) (3) (2) (1) 10 100 1000 (s) 2006-11-13 ...

Page 8

... 2 1.0 0.8 (V) DS 1.0 0.8 0.6 0.4 0 (V) GS 100 Common source Tc = 25°C Pulse test 10 0.1 10 100 (A) 8 TPCP8403 I – Common source 6 4 25° Pulse test 10 4 3.8 3.6 3.4 3 Drain−source voltage V ( – Common source Ta= 25℃ ...

Page 9

... C iss 2 C oss 1 C rss 0 −80 10 100 ( (Note 2a) (Note 3b) 30 (Note 2b) (Note 3a) (Note 3b 160 200 0 9 TPCP8403 I – 0,-1V -0.2 -0.4 -1 -0.6 -0.8 Drain−source voltage V ( – Common source 1mA Pulse test − ...

Page 10

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width DSS max 10 100 ( TPCP8403 (4) (3) (2) (1) 10 100 1000 (s) 2006-11-13 ...

Page 11

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPCP8403 20070701-EN 2006-11-13 ...

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