tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet - Page 5

• Manufacturer Part Number: tpcp8403
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
100
-16
-12
0.1
-8
-4
10
0
1
-5
-4
-3
-2
-1
-0.1
0
0
0
-10
-4.5
-6
Common source
V DS = −10 V
Pulse test
-5
Common source
V DS = -10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
-0.4
Ta = −55°C
-2
Drain current I
-4
-3.8
-1
100
-3.4
-3.6
-0.8
-3.2
⎪Y
I
I
D
D
fs
– V
– V
Ta = −55°C
25
⎪ – I
-4
25
DS
GS
-1.2
D
-3
100
D
-10
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
-6
V GS = -2.4 V
-1.6
(V)
(V)
-2.8
-2.6
-2.0
-100
-8
5
-1000
-0.8
-100
-1.0
-0.2
-10
-0.6
-0.4
-10
-8
-6
-4
-2
0
0
-0.1
0
0
10
Common source
Tc = 25°C
Pulse test
6
5
-0.8
Drain−source voltage V
Gate−source voltage V
-1
-4
4.5
Drain current I
-1.7
-1
3.6
4
I D = -3.4A
R
3.8
V
-2
DS (ON)
I
V GS = -10 V
DS
D
– V
-4.5
– V
-8
DS
GS
– I
-3
D
D
3.4
-10
Common source
Ta= 25℃
Pulse test
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
-12
V GS = 2.4 V
-4
(V)
(V)
3.2
TPCP8403
2.8
2.6
3
2006-11-13
-100
-5
-16