tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet - Page 6

• Manufacturer Part Number: tpcp8403
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
10000
1000
160
120
100
2.0
1.5
1.0
0.5
80
40
10
0
−80
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
V GS = -4.5V
−40
Drain−source voltage V
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
V GS = -10V
40
Capacitance – V
-1
0
R
80
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
I D = -0.8, -1.7, -3.4A
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
operation
operation
40
– Ta
– Ta
120
I D = -0.8, -1.7, -3.4A
-10
80
DS
Common source
Tc = 25°C
Pulse test
DS
160
C oss
120
(V)
C rss
C iss
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
200
-100
160
6
-100
-0.1
-40
-30
-20
-10
-10
-4
-3
-2
-1
-0
-1
0
-80
0
0
Common source
Ta= 25℃
Pulse test
V DS
Drain−source voltage V
-40
-10
Ambient temperature Ta (°C)
Total gate charge Q
4
0.4
Dynamic input/output
-3
0
-1
characteristics
-5
I
8
DR
V
th
-16
V GS = 0V
0.8
– V
40
– Ta
V GS
DS
12
-8
80
g
DS
Common source
V DS = -10 V
I D = -1mA
Pulse test
V DD = -32V
Common source
I D = -3.4 A
Ta = 25°C
Pulse test
(nC)
1.2
16
(V)
120
TPCP8403
2006-11-13
1.6
160
20
-10
-16
-14
-12
-8
-6
-4
-2
0