tpcp8h02 TOSHIBA Semiconductor CORPORATION, tpcp8h02 Datasheet

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tpcp8h02

Manufacturer Part Number
tpcp8h02
Description
Silicon Npn Epitaxial Type, Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS
・Multi-chip discrete device; built-in NPN transistor for main switch and
・High DC current gain: h
・Low collector-emitter saturation voltage: V
・High-speed switching: t
Absolute Maximum Ratings
N-ch MOS FET for drive
Transistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation (NPN)
Junction temperature
MOS FET
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Channel Temperature
Note 1: Ensure that the junction (channel) temperature does not exceed 150℃.
Note 2: Device mounted on a glass-epoxy board (FR-4,25.4×25.4×1.6 mm , Cu area: 645 mm
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
This transistor is an electrostatic-sensitive device. Please handle with caution.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
Pulse (Note 1)
DC (Note 1)
Pulse
f
DC
FE
= 25 ns (typ.) (NPN transistor)
= 250 to 400 (I
(Ta = 25°C)
P
C
Symbol
Symbol
TOSHIBA Multi-Chip Transistor
TPCP8H02
V
V
V
V
V
V
(Note 2)
T
I
I
CBO
CEX
CEO
EBO
DSS
GSS
I
CP
I
I
DP
T
C
B
D
ch
j
C
CE (sat)
= 0.3 A) (NPN transistor)
= 0.14 V (max)
(NPN transistor)
Rating
Rating
±10
150
100
200
150
3.0
5.0
0.3
1.0
50
50
30
20
6
1
Unit
Unit
mA
°C
°C
W
V
V
V
A
A
V
V
JEDEC
JEITA
TOSHIBA
Circuit Configuration
0.475
1. SOURCE
2. COLLECTOR
3. COLLECTOR
4. COLLECTOR
S
0.33±0.05
8
1
0.025
0.65
8
1
2.9±0.1
0.17±0.02
0.05
2-3V1E
S
7
2
2
-
-
)
M
5
TPCP8H02
4
3
A
6
2006-11-13
B
5. BASE
6. EMITTER
7. GATE
8. DRAIN
4
5
0.28
1.12
1.12
0.28
A
0.8±0.05
+0.13
+0.13
+0.1
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
M
B

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tpcp8h02 Summary of contents

Page 1

... 5 0 (Note 2) 1 150 °C j Symbol Rating Unit DSS V ±10 V GSS I 100 200 DP T 150 ° TPCP8H02 0.33±0. 0.475 0.05 M 0.65 2.9±0.1 A 0.8±0.05 S 0.025 S +0.1 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 -0.11 5. BASE 1. SOURCE 6. EMITTER 2. COLLECTOR 7. GATE 3. COLLECTOR 8. DRAIN 4 ...

Page 2

... See Figure 1 circuit diagram ≒ stg = - Output 2 TPCP8H02 Min Typ. Max ⎯ ⎯ 100 ⎯ ⎯ 100 ⎯ ⎯ 30 ⎯ 250 400 ⎯ ⎯ 120 ⎯ ⎯ 140 ⎯ ⎯ ...

Page 3

... Gate Pulse Width 10μs, tr, tf<5ns RL (Zout=50Ω), Common Source, Ta=25°C Duty Cycle<1% VDD requires a higher voltage than V GS (on) < V < (off (on) recommended voltage for turning on this GS 3 TPCP8H02 Min Typ. Max Unit ⎯ ⎯ ±1 μA ⎯ ⎯ ⎯ ⎯ 1 μ ...

Page 4

... −55°C 25°C 0. 0.001 (A) −55°C 25°C 0.8 1.0 1.2 ( TPCP8H02 h – 100°C 25°C −55°C Common emitter Single nonrepetitive pulse 0.01 0.1 1 Collector current I ( – (sat) C Common emitter β Single nonrepetitive pulse Ta = − ...

Page 5

... Collector−emitter voltage – (j-c) w Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 0 Pulse width t ( μs* 100 (V) 5 TPCP8H02 2 ) 100 1000 2006-11-13 ...

Page 6

... DS 1000 100 10 1 100 125 150 1 100 Common source 0~2. 25° 100 0.1 (mA) 6 TPCP8H02 − (ON) D Common source Ta = 25° 1 100 Drain current I (mA) D ⎪Y ⎪ − Common source 25°C ...

Page 7

... Gate−source voltage V (V) 250 Common source 25°C 200 150 100 50 0 −0.2 125 0 150 Drain−source voltage V 7 TPCP8H02 − (ON 100°C − (V) GS − −0.4 −0.6 − ...

Page 8

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 TPCP8H02 20070701-EN 2006-11-13 ...

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