tpcp8h02 TOSHIBA Semiconductor CORPORATION, tpcp8h02 Datasheet - Page 6

• Manufacturer Part Number: tpcp8h02
• Description: Silicon Npn Epitaxial Type, Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Nch-MOS
10000
1000
100
250
200
150
100
50
10
0
8
7
6
5
4
3
2
1
0
−25
0.1
0
10
Common source
t off
t on
0
Drain−source voltage V
t f
t r
4 3
Ambient temperature Ta (°C)
2.5
0.5
Drain current I
25
2.3
V GS = 1.5 V, I D = 1 mA
1
R
2.1
DS (ON)
I
50
D
2.5 V, 10 mA
t − I
– V
1.0
D
DS
75
– Ta
D
4.0 V, 10 mA
10
(mA)
100
DS
Common source
Ta = 25°C
Common source
V DD = 3 V
V GS = 0～2.5V
Ta = 25°C
1.5
V GS = 1.3 V
(V)
125
1.5
1.9
1.7
150
100
2.0
6
1000
100
100
12
10
10
10
8
6
4
2
0
1
1
0.1
1
1
Common source
Ta = 25°C
Common source
V DS = 3 V
Ta = 25°C
V GS = 1.5 V
Drain−source voltage V
Drain current I
Drain current I
Capacitance − V
10
10
1
R
DS (ON)
⎪Y
fs
⎪ − I
− I
D
D
D
D
100
100
10
DS
(mA)
(mA)
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
DS
C iss
C oss
C rss
2.5
(V)
4
TPCP8H02
2006-11-13
1000
1000
100