tpcp8h02 TOSHIBA Semiconductor CORPORATION, tpcp8h02 Datasheet - Page 3

• Manufacturer Part Number: tpcp8h02
• Description: Silicon Npn Epitaxial Type, Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

MOS FET
Precautions
V
this product. For normal switching operation, V
lower voltage than V
(The relationship can be established as follows: V
Please take this into consideration when using the device. The V
product is 2.5 V or higher.
th
Figure 2 Switching Time Test Circuit & Timing Chart
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
can be expressed as the voltage between gate and source when the low operating current value is I
2.5V
0
Characteristics
10us
th.
Turn-on time
Turn-off time
Vin
Rg
V
R
｜Yfs｜
Symbol
(BR)DSS
DS(ON)
RL
VDD
I
I
C
C
C
V
GSS
DSS
t
t
oss
on
off
iss
rss
th
GS (on)
Vout
GS (off)
V
I
V
V
V
I
I
I
V
See Figure 2 circuit diagram.
V
V
D
D
D
D
requires a higher voltage than V
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 10mA , V
= 10mA , V
= 1mA , V
< V
3
= ±10 V, V
= 20 V, V
= 3V, I
= 3V, I
= 3V, V
= 0 to 2.5V
≒ 3V, R
Gate Pulse Width 10μs, tr, tf<5ns
(Zout=50Ω), Common Source, Ta=25°C
Duty Cycle<1%
th
< V
Test Condition
D
D
GS
GS
GS
= 0.1mA
= 10mA
GS
GS
GS
GS (on)
GS
L
DS
= 0, f=1MHz
recommended voltage for turning on this
= 1.5V
= 300 Ω
= 4V
= 2.5V
= 0
= 0
= 0
)
Min
th
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
Typ.
125
1.5
2.2
5.2
9.3
4.5
9.8
70
⎯
⎯
⎯
⎯
⎯
GS (off)
TPCP8H02
2006-11-13
Max
±1
D
1.1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
requires a
1
3
4
=100 μA for
Unit
μA
μA
mS
pF
Ω
ns
V
V