tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 4

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (Includes Schottky Barrier Diode)
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gateswitch charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs
t
t
iss
rss
gd
th
fs
r
f
sw
g
1
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
I
V
D
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
GS
= 10 mA, V
= 10 mA, V
4
= 1.0 A, V
= 8.5 A, V
(Ta = 25°C)
= ±16 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
V
D
D
D
GS
GS
DD
D
GS
GS
GS
GS
= 10 μs
GS
GS
GS
= 1 mA
= 4.3 A
DS
= 4.3 A
= 4.3 A
⎯
= 0 V
= −20 V
∼ − 15 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V,I
= 5 V,I
= 10 V,I
= 0 V
I
D
= 4.3 A
D
D
D
R
= 8.5 A
3.5 Ω
= 8.5 A
= 8.5 A
L
V
OUT
=
Min
Min
1.1
5.5
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2295
Typ.
10.8
14.5
Typ.
−0.5
360
510
3.7
16
13
11
17
15
52
49
27
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
2006-11-16
TPC8A01
−0.6
−1.2
Max
Max
±10
2.3
18
10
21
34
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V