tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 5

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
10
100
0.1
12
10
8
6
4
2
0
8
4
0
1
0
0.1
0
8
10
1
0.2
Drain-source voltage V
Gate-source voltage V
100
6
4
Drain current I
3.5
2
1
25
0.4
Tａ=-55℃
I
I
|Y
D
D
fs
– V
– V
| – I
Tａ=-55℃
3
DS
GS
3.2
100
D
0.6
D
3.1
Common source
V DS = 10 V
Pulse test
GS
DS
(A)
10
4
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
(V)
(V)
0.8
25
VGS=2.5V
5
3.0
2.9
2.8
2.7
2.6
100
1
6
5
1000
0.6
0.5
0.4
0.3
0.2
0.1
100
20
16
12
10
8
4
0
0
1
0
0.1
0
10
8
6
4
2
Drain-source voltage V
1
Gate-source voltage V
Drain current I
3.5
4
1
R
V
DS (ON)
2
I
DS
D
– V
– V
6
DS
GS
– I
D
3
3.3
VGS=4.5V
Common source
Ta = 25°C
Pulse test
D
GS
DS
(A)
8
10
10
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(V)
(V)
4
ID=6A
10
3.2
1.5
VGS=2.6V
3
2006-11-16
TPC8A01
2.8
3.1
3.0
29
12
100
5